= --- --- == -? = rf mosfet power transistor, 5w, 28v 500 - 1000 mhz LF2805A features n-channel enhancement mode device dmos structure lower capacitances for broadband operation common source configuration lower noise floor appiications . *broadband linear operation 500 mhz to 1400 mhz absolute maximum ratings at 25c electrical characteristics at 25c parameter drain-source breakdown voltage drain-source leakage current gate-source leakage current gate threshold voltage forwardtransconductance input capacitance output capacitance reverse capacitance power gain drain efficiency load mismatch tolerance symbol min max units lest conditions bv,,, 65 - v v,,=o.o v, 1,,=2.0 ma ?dss - 1.0 ma v,,=28.0 v, v,,=o.o v i gss 1.0 p-4 v,,=20 v, v,,=o.o v v gsctw 2.0 6.0 v v&o.0 v, l,,=lo.o ma gm 80 - ms v&o.0 v, i&00.0 ma, avgs=l .o v, 80 us puke c iss 7 pf v&8.0 v, f-l.0 mhz c oss 5 pf v,,=28.0 v, f-1 .o mhz c rss 2.4 pf v,,=28.0 v, f=l .o mhz gp 10 - db v,,d8.0 v, i,,=50 ma, po,+0 w, f=l .o ghz ?1d 50 - % v,,=28.0 v, i,,=50 ma, p,s5.0 w, f=l .o ghz vswr-t - 2o:l - v,,=28.0 v, i,,=50 ma, p,&%o w, f=l .o ghz specifications subject to change without notice. m/a-com, inc. 9-71 north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 8 europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, 5w, 28v LF2805A v2.00 typical broadband performance curves capacitances vs voltage power output vs voltage f=l .o mhz f=l .o ghz p,,=o.5 w i,,=50 ma 7 7 6 - gain vs frequency 20 v,,=28 v i,,=50 ma p0,,=5.0 w 15 s ?0 210 z 5 - 500 700 1000 1400 frequency (mhz) efficiency vs frequency v,,=28 v i,,=50 ma p,,=5.0 w 500 750 1000 1250 1400 frequency (mhz) power output vs power output v,,=28 v i,,=50 ma i;- p-p= 3 2- i? 1 0 0 0.05 02 0.4 0.6 0.6 1 power input (w) specifications subject to change without notice. 9-72 north america: tel. (800) 366-2266 d asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. n europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, 5w. 28v LF2805A v2.00 typical device impedance frequency (mhz) 500 1000 1400 q,, (ohms) z load (ohms) 4.3 - j 29.0 27.3 + j 28.6 2.2 - j 2.75 8.0 + j 16.0 2.8 + j 3.0 9.4+j 10.6 v,,=28 v, ido= ma, p,,=5.0 watts z,, is the series equivalent input impedance of the device from gate to source. z, oab $ the optimum series equivalent load impedance as measured from drain to ground. rf test fixture power supply jack <3 places) 7 r ,015 uf (4 places> subs1 rate .031? thick, er = 2.54 llk ohms l/8 watt 50 ohm rf cunnector 10 turns uf 18 awg wire (2 places) input 560 pf l- ,180 i- 1.740 l-560 pf specifications subject to change without notice. m/a-com, inc. 9-73 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
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